MMST3904 [BL Galaxy Electrical]
NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
| 型号： | MMST3904 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | NPN Silicon Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：302K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
MMST3904
FEATURES
Pb
Lead-free
z
Power dissipation.(PC=0.2W)
APPLICATIONS
z
Audio frequency general purpose amplifier.
SOT-323
ORDERING INFORMATION
Type No.
Marking
K2N
Package Code
SOT-323
MMST3904
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
40
V
5
V
Collector Current -Continuous
Collector Dissipation
200
200
mA
mW
℃
PC
Junction and Storage Temperature
Tj,Tstg
-55~150
Document number: BL/SSSTF051
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
MMST3904
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC=10μA,IE=0
IC=1mA,IB=0
IE=10μA,IC=0
VCB=60V,IE=0
VCE=40V,IB=0
VEB=5V,IC=0
MIN
60
40
5
MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
V
0.05 μA
Collector cut-off current
ICEO
0.5
μA
Emitter cut-off current
IEBO
0.05 μA
VCE=1V,IC=0.1mA
VCE=1V,IC=1mA
VCE=1V,IC=10mA
VCE=1V,IC=50mA
VCE=1V,IC=100mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
VCE=20V, IE= 10mA
f=100MHz
40
70
100
60
30
DC current gain
hFE
300
0.25
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
VCE(sat)
0.3
0.65 0.85
0.95
VBE(sat)
V
fT
300
MHz
pF
dB
nS
nS
nS
nS
Cob
NF
td
VCB=5V, IE=0,f=1MHz
4
VCE=5V,IC=0.1mA,
5
f=1KHz,Rg=1KΩ
Delay time
35
35
200
50
VCC=3V,VBE=0.5V,
IC=10mA,IB=1mA
Rise time
tr
Storage time
ts
VCC=3V,IC=10mA,
IB1=IB2=1mA
Fall time
tf
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTF051
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
MMST3904
Document number: BL/SSSTF051
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
MMST3904
PACKAGE OUTLINE
Plastic surface mounted package
SOT-323
SOT-323
Dim
A
Min
1.8
Max
2.2
B
1.15
1.35
C
D
E
1.0Typical
0.15
0.25
1.2
0.35
0.40
1.4
G
H
J
0.02
0.1
0.1Typical
K
2.1
2.3
All Dimensions in mm
PACKAGE INFORMATION
Device
Package
Shipping
MMST3904
SOT-323
3000/Tape&Reel
Document number: BL/SSSTF051
Rev.A
www.galaxycn.com
4
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